dc.contributor.author | Lu, Pai | |
dc.contributor.author | Ohlckers, Per | |
dc.contributor.author | Müller, Lutz | |
dc.contributor.author | Leopold, Steffen | |
dc.contributor.author | Hoffmann, Martin | |
dc.contributor.author | Grigoras, Kestutis | |
dc.contributor.author | Ahopelto, Jouni | |
dc.contributor.author | Prunnila, Mika | |
dc.contributor.author | Chen, Xuyuan | |
dc.date.accessioned | 2018-09-18T09:30:36Z | |
dc.date.available | 2018-09-18T09:30:36Z | |
dc.date.created | 2017-02-24T19:44:24Z | |
dc.date.issued | 2016 | |
dc.identifier.citation | Electrochemistry communications. 2016, 70 51-55. | nb_NO |
dc.identifier.issn | 1388-2481 | |
dc.identifier.uri | http://hdl.handle.net/11250/2563127 | |
dc.description.abstract | We demonstrate high aspect ratio silicon nanorod arrays by cyclic deep reactive ion etching (DRIE) process as a scaffold to enhance the energy density of a Si-based supercapacitor. By unique atomic layer deposition (ALD) technology, a conformal nanolayer of TiN was deposited on the silicon nanorod arrays as the active material. The TiN coated silicon nanorods as a supercapacitor electrode lead to a 6 times improvement in capacitance compared to flat TiN film electrode. | nb_NO |
dc.language.iso | eng | nb_NO |
dc.publisher | Elsevier | nb_NO |
dc.title | Nano fabricated silicon nanorod array with titanium nitride coating for on-chip supercapacitors | nb_NO |
dc.type | Journal article | nb_NO |
dc.type | Peer reviewed | nb_NO |
dc.description.version | acceptedVersion | nb_NO |
dc.rights.holder | © 2016 Elsevier B.V. All rights reserved. | nb_NO |
dc.source.pagenumber | 51-55 | nb_NO |
dc.source.volume | 70 | nb_NO |
dc.source.journal | Electrochemistry communications | nb_NO |
dc.identifier.doi | 10.1016/j.elecom.2016.07.002 | |
dc.identifier.cristin | 1453854 | |
cristin.unitcode | 222,58,4,0 | |
cristin.unitname | Institutt for mikrosystemer | |
cristin.ispublished | true | |
cristin.fulltext | postprint | |
cristin.qualitycode | 1 | |