Vis enkel innførsel

dc.contributor.authorSu, Binbin
dc.contributor.authorChen, Xuyuan
dc.contributor.authorHalvorsen, Einar
dc.date.accessioned2017-09-07T10:53:46Z
dc.date.available2017-09-07T10:53:46Z
dc.date.created2017-02-13T17:25:16Z
dc.date.issued2016
dc.identifier.citationJournal of Physics: Conference Series 773 (2016)nb_NO
dc.identifier.issn1742-6588
dc.identifier.urihttp://hdl.handle.net/11250/2453550
dc.description.abstractWe present graphene synthesized by chemical vapour deposition under atmospheric pressure on both porous nanostructures and flat wafers as electrode scaffolds for supercapacitors. A 3nm thin gold layer was deposited on samples of both porous and flat silicon for exploring the catalytic influence during graphene synthesis. Micro-four-point probe resistivity measurements revealed that the resistivity of porous silicon samples was nearly 53 times smaller than of the flat silicon ones when all the samples were covered by a thin gold layer after the graphene growth. From cyclic voltammetry, the average specific capacitance of porous silicon coated with gold was estimated to 267 μF/cm2 while that without catalyst layer was 145μF/cm2. We demonstrated that porous silicon based on nanorods can play an important role in graphene synthesis and enable silicon as promising electrodes for supercapacitors.nb_NO
dc.language.isoengnb_NO
dc.rightsNavngivelse 4.0 Internasjonal*
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/deed.no*
dc.titleGraphene synthesized on porous silicon for active electrode material of supercapacitorsnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionpublishedVersionnb_NO
dc.rights.holderContent from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. Published under licence by IOP Publishing Ltdnb_NO
dc.source.pagenumber1-5nb_NO
dc.source.volume773nb_NO
dc.source.journalJournal of Physics, Conference Seriesnb_NO
dc.source.issue1nb_NO
dc.identifier.doi10.1088/1742-6596/773/1/012057
dc.identifier.cristin1450128
cristin.unitcode222,60,6,0
cristin.unitnameInstitutt for mikro- og nanosystemteknologi
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode1


Tilhørende fil(er)

Thumbnail

Denne innførselen finnes i følgende samling(er)

Vis enkel innførsel

Navngivelse 4.0 Internasjonal
Med mindre annet er angitt, så er denne innførselen lisensiert som Navngivelse 4.0 Internasjonal