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dc.contributor.authorLe, Cuong Phu
dc.contributor.authorHalvorsen, Einar
dc.date.accessioned2017-09-07T10:04:39Z
dc.date.available2017-09-07T10:04:39Z
dc.date.created2017-02-13T17:27:26Z
dc.date.issued2016
dc.identifier.citationJournal of Physics: Conference Series 773 (2016)nb_NO
dc.identifier.issn1742-6588
dc.identifier.urihttp://hdl.handle.net/11250/2453529
dc.description.abstractThis paper analyses the possibility of MEMS electrostatic influence machines using electromechanical switches like the historical predecessors did two centuries ago. We find that a generator design relying entirely on standard silicon-on-insulator(SOI) micromachining is conceivable and analyze its performance by simulations. The concept appears preferable over comparable diode circuits due to its higher maximum energy, faster charging and low precharging voltage. A full electromechanical lumped-model including parasitic capacitances of the switches is built to capture the dynamic of the generator. Simulation results show that the output voltage can be exponentially bootstrapped from a very low precharging voltage so that otherwise inadequately small voltage differences or charge imbalances can be made useful.nb_NO
dc.language.isoengnb_NO
dc.rightsNavngivelse 4.0 Internasjonal*
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/deed.no*
dc.titleMEMS electrostatic influence machinesnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionpublishedVersionnb_NO
dc.rights.holderContent from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. Published under licence by IOP Publishing Ltdnb_NO
dc.source.pagenumber1-5nb_NO
dc.source.volume773nb_NO
dc.source.journalJournal of Physics, Conference Seriesnb_NO
dc.source.issue012048nb_NO
dc.identifier.doi10.1088/1742-6596/773/1/012048
dc.identifier.cristin1450130
cristin.unitcode222,60,6,0
cristin.unitnameInstitutt for mikro- og nanosystemteknologi
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode1


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