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dc.contributor.authorAasmundtveit, Knut
dc.contributor.authorLuu, Thi Thuy
dc.contributor.authorNguyen, Hoang-Vu
dc.contributor.authorLarsson, Andreas
dc.contributor.authorTollefsen, Torleif Andre
dc.date.accessioned2020-07-01T12:20:22Z
dc.date.available2020-07-01T12:20:22Z
dc.date.created2020-03-25T16:07:08Z
dc.date.issued2019
dc.identifier.citationAasmundtveit, K. E., Luu, T., Nguyen, H., Larsson, A., & Tollefsen, T. A. (2019, 28-31 May 2019). Solid-Liquid InterDiffusion (SLID) Bonding, for Thermally Challenging Applications. Paper presented at the 2019 IEEE 69th Electronic Components and Technology Conference (ECTC).en_US
dc.identifier.isbn978-1-7281-1499-6
dc.identifier.urihttps://hdl.handle.net/11250/2660345
dc.description.abstractSolid-Liquid InterDiffusion (SLID) bonding is particularly suited for high-temperature applications, since SLID bonds can tolerate higher temperatures than the bonding temperature. SLID uses a layered binary metal structure, which reacts to high-temperature stable intermetallics at normal solder temperatures. Hence, high-temperature stability is achievable for a process at moderate bonding temperatures. Alternatively, low-temperature SLID bonding (bonding down to ~100 °C) allows bonding of temperature-sensitive components and materials, without restricting the application temperature range. Cu-Sn is the most mature SLID system. We show optimized Cu-Sn SLID bonding for vacuum encapsulation of MEMS devices. Au-Sn SLID has superior oxidation resistance, and we demonstrate that Au-Sn SLID has excellent reliability when bonding thermally mismatched chips and substrates. We demonstrate Ni-Sn SLID bonding, as well as the low-temperature alternatives Au-In and Au-In-Bi. For Cu-Sn, Au-Sn and Au-In SLID, we show experimental evidence for the high-temperature stability predicted from phase diagrams.en_US
dc.language.isoengen_US
dc.relation.ispartof2019 IEEE 69th Electronic Components and Technology Conference (ECTC)
dc.titleSolid-liquid InterDiffusion (SLID) Bonding, for Thermally Challenging Applicationsen_US
dc.typeChapteren_US
dc.description.versionacceptedVersionen_US
dc.rights.holderIEEEen_US
dc.source.journal2019 IEEE 69th Electronic Components and Technology Conference (ECTC)en_US
dc.identifier.doi10.1109/ECTC.2019.00029
dc.identifier.cristin1803565
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode1


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