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dc.contributor.authorRoy, Avisek
dc.contributor.authorAzadmehr, Mehdi
dc.contributor.authorHäfliger, Philipp
dc.contributor.authorTa, Bao Quoc
dc.contributor.authorAasmundtveit, Knut
dc.date.accessioned2020-03-18T09:22:21Z
dc.date.available2020-03-18T09:22:21Z
dc.date.created2019-02-15T12:41:43Z
dc.date.issued2019
dc.identifier.citationIEEE International Conference on Nanotechnology. 2019, 2018-July 1-4.en_US
dc.identifier.issn1944-9399
dc.identifier.urihttps://hdl.handle.net/11250/2647323
dc.description.abstractDirect integration of Carbon Nanotubes (CNTs) in CMOS is important for commercially manufacturing low-cost CNT-based sensors. In such compact sensors, CNTs would act as sensing element, and CMOS circuits would process relevant signals from the CNTs. CNTs can be directly synthesized and integrated into CMOS by local thermal chemical vapor deposition (CVD), where a hot spot of 900 °C can be generated by CMOS micro-heaters. However, a sufficient thermal gradient between the micro-heaters and nearest CMOS devices is a prerequisite to ensure non-destructive temperature (<300 °C) in the electronic circuit regions. Our previous works have shown modelling and simulation of various CMOS micro-heaters that are promising for fulfilling these temperature requirements. In this paper, we investigate the layout designs of different metal and polysilicon micro-heaters using AMS 0.35μm CMOS process. Optical micrographs of the fabricated micro-heaters are also presented.en_US
dc.language.isoengen_US
dc.titleDirect Synthesis of Carbon Nanotubes in CMOS-Layout of Micro-heatersen_US
dc.typePeer revieweden_US
dc.typeJournal articleen_US
dc.description.versionacceptedVersionen_US
dc.source.pagenumber1-4en_US
dc.source.volume2018-Julyen_US
dc.source.journalIEEE International Conference on Nanotechnologyen_US
dc.identifier.doi10.1109/NANO.2018.8626363
dc.identifier.cristin1677667
dc.relation.projectNorges forskningsråd: 245963en_US
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode1


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