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dc.contributor.authorLu, Pai
dc.contributor.authorOhlckers, Per
dc.contributor.authorMüller, Lutz
dc.contributor.authorLeopold, Steffen
dc.contributor.authorHoffmann, Martin
dc.contributor.authorGrigoras, Kestutis
dc.contributor.authorAhopelto, Jouni
dc.contributor.authorPrunnila, Mika
dc.contributor.authorChen, Xuyuan
dc.date.accessioned2018-09-18T09:30:36Z
dc.date.available2018-09-18T09:30:36Z
dc.date.created2017-02-24T19:44:24Z
dc.date.issued2016
dc.identifier.citationElectrochemistry communications. 2016, 70 51-55.nb_NO
dc.identifier.issn1388-2481
dc.identifier.urihttp://hdl.handle.net/11250/2563127
dc.description.abstractWe demonstrate high aspect ratio silicon nanorod arrays by cyclic deep reactive ion etching (DRIE) process as a scaffold to enhance the energy density of a Si-based supercapacitor. By unique atomic layer deposition (ALD) technology, a conformal nanolayer of TiN was deposited on the silicon nanorod arrays as the active material. The TiN coated silicon nanorods as a supercapacitor electrode lead to a 6 times improvement in capacitance compared to flat TiN film electrode.nb_NO
dc.language.isoengnb_NO
dc.publisherElseviernb_NO
dc.titleNano fabricated silicon nanorod array with titanium nitride coating for on-chip supercapacitorsnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionacceptedVersionnb_NO
dc.rights.holder© 2016 Elsevier B.V. All rights reserved.nb_NO
dc.source.pagenumber51-55nb_NO
dc.source.volume70nb_NO
dc.source.journalElectrochemistry communicationsnb_NO
dc.identifier.doi10.1016/j.elecom.2016.07.002
dc.identifier.cristin1453854
cristin.unitcode222,58,4,0
cristin.unitnameInstitutt for mikrosystemer
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode1


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